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Atomic layer deposition of oxides for microelectronics
Atomic layer deposition of high-κ oxides has gained interest due to the wide applications in microelectronics. For gate dielectric application, amorphous oxides are preferred for the structural uniformity at nanometer scale. La x M 2- x O 3 (M = Sc, Lu or Y) films were deposited by ALD with metal amidinate precursors and H 2 O. Both LaScO 3 and LaLuO 3 films are amorphous and free of interfacial layers. Besides the structural benefits, both oxides have high dielectric constants (∼23 for LaScO 3 and 28 ± 1 for LaLuO 3 ), low leakage current density, and very few bulk traps, and are scalable to EOT < 1 nm. La 1.23 Y 0.77 O 3 films have polycrystalline structures with moderately high κ ∼ 17 and low leakage current. The Poole-Frenkel mechanism is verified in the ternary oxide films by studying temperature dependence of the leakage current. For La 1.1 Al 0.9 O 3 /Si, the thermal stability...
